This study describes a technique for the growth of thin nitride layer
on aluminium alloy samples by direct laser synthesis with the advantag
es of good adhesion and localisation. The laser irradiation process is
performed using an XeCl excimer laser (lambda = 308 nm, 50 Hz) under
a nitrogen atmosphere. The laser induced plasma interacts with the mel
ted sample surface resulting in nitrogen atom diffusion and reaction i
nto the depth of the sample. Plasma spots were overlapped by two dimen
sional laser beam displacement to ensure the complete coating of the s
urface with a specified laser fluence (1.6 J/cm(2)) and number of puls
es (500), while not removing of the nitride layer already synthesised.
Under these conditions, the diffusion layer penetrates a few mu m dee
p, but its crystalline quality is preserved. Interesting information o
n the layer formation and composition are drawn from nuclear analysis
(RBS and NRA) to determine the nitrogen and oxygen (contaminant) conce
ntration profiles. (C) 1998 Elsevier Science B.V.