XPS STUDY OF XECL EXCIMER-LASER-ETCHED INP

Citation
Jm. Wrobel et al., XPS STUDY OF XECL EXCIMER-LASER-ETCHED INP, Applied surface science, 129, 1998, pp. 805-809
Citations number
14
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
ISSN journal
01694332
Volume
129
Year of publication
1998
Pages
805 - 809
Database
ISI
SICI code
0169-4332(1998)129:<805:XSOXEI>2.0.ZU;2-V
Abstract
X-ray photoelectron spectroscopy (XPS) and scanning electron microscop y (SEM) have been applied to investigate the surface chemistry and mor phology of InP wafers photochemically etched under 308 nm illumination from a XeCl excimer laser. The etching experiments were carried out a t ambient temperature and in a low-pressure (1 mu bar) atmosphere of C l-2 (10%) diluted in He. During the process, the samples were exposed to laser radiation with fluences of 73 mJ/cm(2) or 114 mJ/cm(2). Both fluence values are below the ablation threshold of 140 mJ/cm(2) for In P, The mapping of the photoelectron spectral line intensities of In (3 d(5/2)), Cl (2p(3/2)), and P (2p(3/2)) displayed the distribution of I n-Cl and In-P compounds on the surface of the wafer. The chemical comp osition and morphology of the etched surface were found to be dependen t on laser fluence. Surfaces with a fine granular structure were obser ved at a lower fluence, while at higher fluences, surfaces with a line ar grating-like structure were formed. More chlorine is bound to the s urface prepared at a higher fluence. (C) 1998 Elsevier Science B.V.