XPS AND XTEM STUDY OF A1N FORMATION BY N-2(+) IMPLANTATION OF ALUMINUM

X-ray photoelectron spectroscopy (XPS) and cross-sectional transmissio n electron microscopy (XTEM) were used to study the formation of AlN f ilms by N-2(+) ion implantation of aluminium at energies of 3 keV and 100 keV. In both cases, a two-stage mechanism was found, comprising fi rst the oriented precipitation of small particles of the hexagonal AlN -phase. followed by growth and coalescence finally forming a continuou s AlN-layer while increasing the implantation dose from 1 x 10(17) cm( -2) to 2 x 10(17) cm(-2). The results of both methods are in excellent agreement and furthermore provide complementary information concernin g chemical composition and binding energies as well as microstructural details. (C) 1998 Elsevier Science S.A.