AN INVESTIGATION OF THE PULSED PLASMA FOR DEPOSITION OF THIN-FILM MATERIALS

Citation
Px. Yan et al., AN INVESTIGATION OF THE PULSED PLASMA FOR DEPOSITION OF THIN-FILM MATERIALS, Surface & coatings technology, 102(1-2), 1998, pp. 175-181
Citations number
25
Categorie Soggetti
Materials Science, Coatings & Films
ISSN journal
02578972
Volume
102
Issue
1-2
Year of publication
1998
Pages
175 - 181
Database
ISI
SICI code
0257-8972(1998)102:1-2<175:AIOTPP>2.0.ZU;2-D
Abstract
A new technology for generating pulsed plasma was developed for the de position of thin film materials according to the concept of the coaxia l plasma gun. A model has been developed to describe the generation an d acceleration of pulsed plasma. Diagnostic measurements were carried out to understand the basic process of generation of pulsed plasma by using the electric probes and mass spectroscopy. It was found that the plasma density and composition strongly depend on the discharging vol tage and inner-electrode materials. The electron density for a titaniu m inner-electrode is higher than that for a graphite inner-electrode. Typical values for the electron density for the pulsed plasma are n(e) = 10(14) for graphite innerelectrode and 10(15) cm(-3) for titanium i nner electrode. The electron temperature is T-e = 65 eV. The velocity of pulsed plasma increases proportionally with discharging voltage. Th e pulsed plasma mainly consists of two kinds of ions: working gas ions and inner-electrode ions. The ratio between two kinds of ions depends on the inner-electrode materials and the discharging voltage. The ion amounts of the inner-electrode, which has low conductivity, are much lower than that of working gas and have no relationship with dischargi ng voltage. However, if the inner-electrode is made of metal materials with good conductivity, the plasma amounts of two kinds of ions can b e compared with each other. The pursed plasma-material interaction is also discussed in detail. (C) 1998 Published by Elsevier Science S.A.