MATERIAL AND N-P JUNCTION PROPERTIES OF N-IMPLANATED, P-IMPLANTED, AND N P-IMPLANTED SIC/

Elevated temperature (ET) multiple energy N, P, and N/P implantations were performed into p-type 6H-SiC epitaxial layers. For comparison, ro om temperature (RT) N and P implantations were also performed. In the N/P coimplanted material a sheet resistance of 2.1X10(2) Ohm/square wa s measured, which is lower compared to the values measured in N or P i mplanted material of the same net donor dose. The RT P implantation re sulted in heavy lattice damage and consequently low P electrical activ ation, even after 1600 degrees C annealing. After annealing the Ruther ford backscattering yield either coincided or came close to the virgin level for ET implantations and RT N implantation, whereas for RT P im plantation the yield was high, indicating the presence of high residua l damage. Vertical n-p junction diodes were made by selective area ET N, P, and N/P implantations and RT N and P implantations using a 2.5 m u m thick SiO2 layer as an implant mask. The diodes were characterized by capacitance-voltage and variable temperature current-voltage measu rements. (C) 1998 American Institute of Physics.