The residual defects in medium energy (40 keV) and low dose (5.0 X 10(
14)/cm(2)) Sb ion-implanted Si after annealing at 1000 degrees C for 1
0 and 30 min have been investigated by several advanced transmission e
lectron microscopy techniques and secondary ion mass spectroscopy. The
se annealing conditions give rise to the formation of two new types of
residual defects: irregular shape defects with amorphous structure, a
nd rod-shaped defects surrounded by four {111} planes which are extend
ed to [110] directions on both sides of an initial amorphous-crystalli
ne interface, as well as well known hexagonal Sb precipitates, dependi
ng on annealing time. It seems likely that a rod-shaped defect is grow
n from an irregular shape defect as a result of long annealing. (C) 19
98 American Institute of Physics.