RESIDUAL DEFECTS IN LOW-ENERGY AND LOW-DOSE ANTIMONY ION-IMPLANTED SILICON

The residual defects in medium energy (40 keV) and low dose (5.0 X 10( 14)/cm(2)) Sb ion-implanted Si after annealing at 1000 degrees C for 1 0 and 30 min have been investigated by several advanced transmission e lectron microscopy techniques and secondary ion mass spectroscopy. The se annealing conditions give rise to the formation of two new types of residual defects: irregular shape defects with amorphous structure, a nd rod-shaped defects surrounded by four {111} planes which are extend ed to [110] directions on both sides of an initial amorphous-crystalli ne interface, as well as well known hexagonal Sb precipitates, dependi ng on annealing time. It seems likely that a rod-shaped defect is grow n from an irregular shape defect as a result of long annealing. (C) 19 98 American Institute of Physics.