SRTIO3 FILMS EPITAXIALLY GROWN BY ECLIPSE PULSED-LASER DEPOSITION ANDTHEIR ELECTRICAL CHARACTERIZATION

Epitaxial (100)SrTiO3 (STO) thin films were grown successfully on (100 )La0.7Sr0.3MnO3/(100)MgO substrates by eclipse pulsed laser deposition in (O-2+Ar) ambient gas. The droplet-free STO films showed marked imp rovement in their permittivity, 320 epsilon(0) at room temperature. Ti me-resolved plume observation and spectrum measurement suggested that the improvement was due to effective excitation and ionization of grow th species in the plume with the aid of coexisting Ar. The STO films a lso showed nonlinear permittivity against the applied field, as common ly observed in single-crystal bulk STO. Using this nonlinear character istic and hole injection into the STO valence band, we deduced the hol e trap concentration in the STO films. The concentration was on the or der of 10(18)cm(-3). (C) 1998 American Institute of Physics.