THE PHOTOLUMINESCENCE IN SI-IMPLANTED SIO2-FILMS WITH RAPID THERMAL ANNEAL()

Two photoluminescence (PL) bands were observed from Si+-implanted SiO2 films after rapid thermal anneal (RTA) at greater than or equal to 95 0 degrees C. The PL band at 2.2 eV was obtained from the films with RT A in dry nitrogen and the other one at 1.9 eV was obtained from the fi lms with RTA in wet nitrogen. The luminescence at 2.2 eV disappeared a fter the films were reannealed with an electrical oven at greater than or equal to 600 degrees C, which is similar to the behavior of oxygen -and hydrogen-deficient structures, and therefore, the mechanism of th is PL band was attributed to the E-delta' center. The other one at the 1.9 eV band, being related closely to Si-O-H structures and still app earing after being reannealed to 800 degrees C, could be ascribed to t he effect of nonbridging oxygen hole centers. (C) 1998 American Instit ute of Physics.