EFFECT OF MICROSTRUCTURE ON EXCITONIC LUMINESCENCE OF SPONTANEOUSLY ORDERED GA0.52IN0.48P ALLOYS

We compare the results of low-temperature (4.2 K) microphotoluminescen ce (PL) measurements on cleaved edges of spontaneously ordered GaInP2 alloy samples with the results of cross-section transmission electron microscopy (TEM). The TEM dark-field images show that the size of orde red domains grows as the deposition progresses. The excitonic luminesc ence peak in the micro-FL spectra of GaInP2 is stronger near the surfa ce of the thin film than near the substrate. From these results, we co nclude that there is a direct correlation between the domain size or a lternatively, the density of domain boundaries, and the relative stren gth of the excitonic peak. (C) 1998 American Institute of Physics.