INGAAS GAAS QUANTUM NANOSTRUCTURE FABRICATION ON GAAS (111)A VICINAL SUBSTRATES BY ATOMIC LAYER EPITAXY/

InGaAs/GaAs quantum wire (QWR) and dots were fabricated on GaAs (111)A vicinal substrates by the atomic layer epitaxy (ALE) technique. In0.2 5Ga0.75As QWR structures were formed on metalorganic vapor phase epita xy grown homogeneous multiatomic height steps on GaAs (111)A vicinal s ubstrates misoriented toward the [11(2) over bar] direction. In photol uminescence measurement only one spectrum, which shows strong polariza tion dependence, was observed. The result and its narrow full. width a t half maximum of 10 meV imply that the elimination of the wetting lay er and excellent size uniformity are realized by the ALE technique. Sp ontaneous alignment of InGaAs quantum dots was also achieved by the AL E method. Boxlike shaped dot arrays of which height is restricted by t he step height indicate that the ALE growth on the(lll)A vicinal surfa ce has an effect on not only the arrangement but also on the size and shape control of quantum nanostructures. (C) 1998 American Institute o f Physics.