298 K OPERATION OF NB NB OXIDE-BASED SINGLE-ELECTRON TRANSISTORS WITHREDUCED-SIZE OF TUNNEL-JUNCTIONS BY THERMAL-OXIDATION/

Authors
SHIRAKASHI J MATSUMOTO K MIURA N KONAGAI M
Citation
J. Shirakashi et al., 298 K OPERATION OF NB NB OXIDE-BASED SINGLE-ELECTRON TRANSISTORS WITHREDUCED-SIZE OF TUNNEL-JUNCTIONS BY THERMAL-OXIDATION/, Journal of applied physics, 83(10), 1998, pp. 5567-5569
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
83
Issue
10
Year of publication
1998
Pages
5567 - 5569
Database
ISI
SICI code
0021-8979(1998)83:10<5567:2KOONN>2.0.ZU;2-I
Abstract
We present the successful operation of Nb/Nb oxide-based single-electr on transistors at room temperature. At first, devices were fabricated by scanning probe microscope based anodic oxidation technique. Then, t he effective area of tunnel junctions was further shrunken by thermal oxidation. Ultrasmall tunnel junctions were easily obtained utilizing additional thermal oxidation process, and single-electron charging eff ects were observed by means of the modulation of Coulomb blockade volt ages at room temperature. (C) 1998 American Institute of Physics.