KINETICS AND CHARACTERIZATION OF PLASMA GROWN ALUMINUM-OXIDE

The anodization of aluminium in a microwave excited O-2 plasma has bee n studied at temperatures less than 100 degrees C. Thirty nanometers o f oxide were grown in times substantially less than one hour. The grow th kinetics follow those expected using the constant current growth mo de. X-ray diffraction, Fourier transform infrared absorption, X-ray ph otoelectron spectroscopy, Auger electron spectroscopy, and electrical studies were carried out. The oxide is amorphous and stoichiometric, t he as-grown films have high electrical conductivity. The method may be well suited for the formation of protective coatings. (C) 1998 Americ an Institute of Physics.