KINETICS OF CRISTOBALITE GROWTH ON POLYCRYSTALLINE SIC FILM STUDIED USING HIGH-TEMPERATURE IN-SITU X-RAY-DIFFRACTOMETRY

Authors
KINGETSU T ITO K TAKEHARA M MASUMOTO H
Citation
T. Kingetsu et al., KINETICS OF CRISTOBALITE GROWTH ON POLYCRYSTALLINE SIC FILM STUDIED USING HIGH-TEMPERATURE IN-SITU X-RAY-DIFFRACTOMETRY, Materials research bulletin, 33(5), 1998, pp. 731-738
Citations number
10
Categorie Soggetti
Material Science
Journal title
Materials research bulletin → ACNP
ISSN journal
00255408
Volume
33
Issue
5
Year of publication
1998
Pages
731 - 738
Database
ISI
SICI code
0025-5408(1998)33:5<731:KOCGOP>2.0.ZU;2-8
Abstract
The kinetics of cristobalite growth on polycrystalline beta-SiC films at 1803 and 1873 K were investigated. Sample films were synthesized on graphite strips via chemical vapor deposition and heated in air by th eir electric resistance. It was demonstrated that in situ X-ray diffra ctometry using imaging plate was useful for analyzing the growth of th e oxide crystals with the coexistence of amorphous silica. The kinetic s were found to obey parabolic laws. This is consistent with oxidation kinetics of SiC reported earlier. (C) 1998 Elsevier Science Ltd.