THE CRYSTALLIZATION PATH OF SRBI2TA2O9 FROM SR-BI-TA-O MOD PRECURSORS

The path of crystal growth from the precursor to SrBi2Ta2O9 (SBT) crys tal was investigated in order to obtain abetter method of fabricating SET films. A phase diagram of the Sr-Bi-Ta-O system With a constituent element ratio similar to that of SET was determined. Thin film sample s were prepared by the metal-organic decomposition method. In the case of a Bi-rich nominal composition (compared with SBT crystal), a fluor ite-like structure appeared at the early stage of the crystal growth, after which the SET phase was finally stabilized. The lower limit of a nnealinng temperature for synthesis of SET thin films with thicknesses less than 100 nm was about 650 degrees C. (C) 1998 Elsevier Science L td.