INFLUENCE OF STRUCTURAL DISORDER AND LIGHT COUPLING ON THE EXCITONIC RESPONSE OF SEMICONDUCTOR MICROCAVITIES

Citation
C. Ell et al., INFLUENCE OF STRUCTURAL DISORDER AND LIGHT COUPLING ON THE EXCITONIC RESPONSE OF SEMICONDUCTOR MICROCAVITIES, Physical review letters, 80(21), 1998, pp. 4795-4798
Citations number
18
Categorie Soggetti
Physics
Journal title
ISSN journal
00319007
Volume
80
Issue
21
Year of publication
1998
Pages
4795 - 4798
Database
ISI
SICI code
0031-9007(1998)80:21<4795:IOSDAL>2.0.ZU;2-M
Abstract
The interplay between structural disorder, Coulomb interaction, and li ght-coupling effects is investigated for high-quality quantum wells in a semiconductor microcavity. The independently measured experimental susceptibility of a single quantum well in linear dispersion theory yi elds excellent agreement with a series of measured reflectivity spectr a for a variety of microcavity and distributed Bragg structures, showi ng that the disorder-averaged response of the exciton in its quantum w ell determines the optical response.