F. Bertin et al., SPECTROSCOPIC ELLIPSOMETRY WITH COMPENSATOR AND X-RAY SPECULAR REFLECTIVITY FOR CHARACTERIZATION OF THIN OPTICAL-LAYERS ON TRANSPARENT SUBSTRATES, Thin solid films, 313, 1998, pp. 68-72
It is demonstrated that the use of X-ray specular reflectivity (XRSR)
to measure the geometrical thickness of thin layers allows one to over
come the thickness-optical property correlation in ellipsometry. In ad
dition, a quasi-achromatic compensator is fitted to a rotating polariz
er ellipsometer allowing the measurement of cos Delta with an accuracy
better than 10(-4) for values close to one, over the entire 0.25-1.7-
mu m spectral range. This set up is applied to the study of transparen
t materials such as Ion Beam Sputtering (IBS) of thin SiO2 layers depo
sited on silica glass substrates. Thus, a transition layer at the top
surface of the substrate has been detected through the cos Delta measu
rements. Ellipsometric results are in very good agreement with those o
btained by photogoniometry. The knowledge of the optical properties of
IBS SiO2 leads to a complete understanding of the ellipsometric respo
nse of a TiO2/SiO2 mirror. (C) 1995 Elsevier Science S.A.