SURFACE DISORDER PRODUCTION DURING PLASMA IMMERSION IMPLANTATION

Comparative investigations were performed using high-depth-resolution Rutherford backscattering (RBS) combined with channeling, spectroellip sometry (SE) and atomic force microscopy (AFM) to analyze surface diso rder and surface roughness formed during plasma. immersion implantatio n of silicon (100) substrates in a gas mixture containing PH3. In orde r to enhance the sensitivity to the determination of the oxygen conten t of the surface oxide layer, the 3.05 MeV (He-4(+), He-4(+)) nuclear resonance was used in combination with channeling. For the analysis of SE data we used the method in which an appropriate optical model is a ssumed and a best fit to the model parameters is obtained (i.e. the th ickness of surface oxide and damaged silicon lavers and the volume fra ction of the components). Evaluation of RES spectra yields damage prof iles consistent with those obtained by SE modelling. (C) 1998 Elsevier Science S.A.