The performance of an automatic spectroscopic ellipsometer, the SOPRA
Multi-layer Monitor (MLM) has been evaluated over a 1-year period on r
epresentative CMOS/Bipolar wafer structures supplied by IC manufacture
rs. Precision, stability, throughput, and accuracy where possible, hav
e been assessed for ONO, OPO, oxide, Si/SiGe and PECVD oxide/metal waf
ers. Examples are given to illustrate the ability of the MLM to discri
minate variations due to intrinsic and deliberately-induced process ch
anges, as well as cross-wafer uniformity. Crown Copyright (C) 1998 Pub
lished by Elsevier Science S.A.