INTERPRETATION OF CRITICAL-POINT ENERGY SHIFTS IN CRYSTALLINE SI BY NEAR-SURFACE LOCALIZATION OF EXCITED ELECTRONIC STATES

Citation
L. Mantese et al., INTERPRETATION OF CRITICAL-POINT ENERGY SHIFTS IN CRYSTALLINE SI BY NEAR-SURFACE LOCALIZATION OF EXCITED ELECTRONIC STATES, Thin solid films, 313, 1998, pp. 557-560
Citations number
9
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
313
Year of publication
1998
Pages
557 - 560
Database
ISI
SICI code
0040-6090(1998)313:<557:IOCESI>2.0.ZU;2-E
Abstract
Various surface-optical spectra can be described in terms of energy de rivatives of the bulk dielectric function. The spectra unequivocally i ndicate that critical point energies obtained from optical data are no t necessarily equal to bulk values and that surface chemical and struc tural terminations are at least contributing factors. We invoke locali zation and transition-lifetime arguments to describe these effects. Ex isting surface-optical calculations do not address these contributions , which may explain in part why discrepancies remain between theory an d experiment. (C) 1998 Elsevier Science S.A.