Resonant optical second harmonic generation (SHG) recently has been sh
own to be a powerful probe of Si surfaces and interfaces. In this work
, a resonance in the region of 3.3 eV is exploited to reveal structura
l information on the adsorption of Ga on vicinal Si(001) surfaces. It
is shown that coverages of less than 0.01 monolayer of Ga can be detec
ted, and that contributions to the SH intensity from terraces and step
s can be distinguished. In particular, it is shown that Ga atoms inter
act with the steps at room temperature, behaviour undetected by scanni
ng tunnelling microscopy. (C) 1998 Elsevier Science S.A.