REAL-TIME PHOTO-SPECTROSCOPIC ELLIPSOMETRY MEASUREMENT OF ELECTRIC-FIELD AND COMPOSITION IN SEMICONDUCTORS

Results presented in this paper demonstrate that photo-modulated spect roscopic ellipsometry (PSE) can provide real-time information on elect ric field and composition without observation of FKO oscillations. Com parison with PR and PSE at the E-0 critical point (CP) in GaAs shows t hat electric field information can be obtained from PSE spectra measur ed at E-1 using simple amplitude considerations. Si1-xGex compositions (0.14 < x < 0.24) evaluated from Lorentzian fits to the E-1 PSE spect ra also agree well with those obtained from PR. Reproducible PSE spect ra have been obtained from, and simultaneous with. SE spectra in as li ttle as 1 s from both Si and III-V semiconductors. Crown Copyright (C) 1998 Published by Elsevier Science S.A.