IN-SITU AS-P EXCHANGE MONITORING IN METAL-ORGANIC VAPOR-PHASE EPITAXYOF INGAAS INP HETEROSTRUCTURE BY SPECTROSCOPIC AND KINETIC ELLIPSOMETRY/

In InGaAs/InP heterostructures, interdiffusion of arsenic and phosphor us at the hetero-interfaces during epitaxial growth degrades the inter face abruptness. This is a serious problem when a very thin InGaAs/InP quantum well is required. In this paper, spectroscopic and kinetic el lipsometry are used to monitor the As-P exchange in-situ in metal-orga nic vapor phase epitaxy (MOVPE) with TBAs and TBP as the group V precu rsors. As a result, it is found that the monitoring of As-P exchange i s possible by kinetic ellipsometry and that useful information for imp roving the gas switching sequence is acquired from such observations. Information from this in-situ kinetic ellipsometry has been confirmed to agree well with ex-situ photoluminescence and transmission electron microscope (TEM) observations. (C) 1998 Elsevier Science S.A.