NANO-MACHINING OF SILICON PHTHALOCYANINE DICHLORIDE FILMS ON H-PASSIVATED SI(111)

Citation
P. Miao et al., NANO-MACHINING OF SILICON PHTHALOCYANINE DICHLORIDE FILMS ON H-PASSIVATED SI(111), Journal of physics. D, Applied physics, 31(9), 1998, pp. 37-40
Citations number
25
Categorie Soggetti
Physics, Applied
ISSN journal
00223727
Volume
31
Issue
9
Year of publication
1998
Pages
37 - 40
Database
ISI
SICI code
0022-3727(1998)31:9<37:NOSPDF>2.0.ZU;2-Q
Abstract
Films of silicon phthalocyanine dichloride (SiPcCl2) deposited from so lution onto a chemically prepared hydrogen-passivated Si(111) surface were manipulated with the scanning tunnelling microscope (STM) in air. We find that nanometre-scale square and trench patterns can be create d in the SiPcCl2 film by the STM tip through repeated scans under norm al imaging conditions (V-sample = +1.68 V, I = 0.35 nA) or by a single scan using a high tunnelling current (10 nA). Spectroscopic (I-V) mea surements of the film show that the film is chemically unchanged by th e machining process. The film cannot be machined after exposure to air for a period of days, suggesting that some form of hydrolysis of SiPc Cl2 occurs.