R. Lin et al., MASS SPECTROSCOPIC STUDY OF THE CRACKING OF TRIMETHYLGALLIUM IN A HEATED DOSER, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(1), 1994, pp. 179-184
Citations number
19
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Trimethylgallium (TMGa) is a common source gas in GaAs film production
by metalorganic chemical vapor deposition and atomic layer epitaxy. R
ecent studies have shown that TMGa is also a useful intermediate for c
hemical beam epitaxy (CBE). However, Suto et al. found that improved f
ilms are produced when the TMGa is ''cracked'' before it impinges on t
he substrate. The objective of this article is to examine the products
of the cracking process. TMGa was passed through a heated tantalum or
stainless steel tube at low pressure, and the products of the decompo
sition were measured with a mass spectrometer. It was found that TMGa
is unreactive in a stainless steel and/or tantalum tube at 250 K. Howe
ver, by 300 K there is significant attenuation of the parent TMGa peak
in both tubes. The dimethylgallium (DMGa) disappears between 600 and
700 K, while the monomethylgallium (MMGa) contribution disappears betw
een 650 and 800 K. The gallium signal is lost between 700 and 800 K. C
alibration runs were performed to determine if the cracking pattern of
TMGa changes with temperature. It was found that the cracking pattern
of TMGa is essentially constant from 200 to 500 K. As a result, the c
hanges in mass spectrometer signal observed in our work must be due to
changes in the composition of the gas, and not due to changes in the
cracking pattern of the various species in the mass spectrometer. Ther
efore, the conclusion of our study is that TMGa decomposes at room tem
perature on a stainless steel or tantalum tube, to yield DMGa. The DMG
a decomposes between 500 and 700 K to yield MMGa. The MMGa decomposes
between 700 and 800 K to yield gallium. The gallium signal is lost abo
ve 800 K, probably due to deposition of gallium inside the cracker. Th
ese results show that under UHV conditions, TMGa is much more reactive
than previous investigators had supposed. In particular, the results
indicate that special precautions must be taken to get TMGa into a vac
uum system. If one puts TMGa through a standard doser at temperatures
slightly above room temperature one will get significant DMGa even aft
er days of passivation.