MASS SPECTROSCOPIC STUDY OF THE CRACKING OF TRIMETHYLGALLIUM IN A HEATED DOSER

Citation
R. Lin et al., MASS SPECTROSCOPIC STUDY OF THE CRACKING OF TRIMETHYLGALLIUM IN A HEATED DOSER, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(1), 1994, pp. 179-184
Citations number
19
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
ISSN journal
07342101
Volume
12
Issue
1
Year of publication
1994
Pages
179 - 184
Database
ISI
SICI code
0734-2101(1994)12:1<179:MSSOTC>2.0.ZU;2-Y
Abstract
Trimethylgallium (TMGa) is a common source gas in GaAs film production by metalorganic chemical vapor deposition and atomic layer epitaxy. R ecent studies have shown that TMGa is also a useful intermediate for c hemical beam epitaxy (CBE). However, Suto et al. found that improved f ilms are produced when the TMGa is ''cracked'' before it impinges on t he substrate. The objective of this article is to examine the products of the cracking process. TMGa was passed through a heated tantalum or stainless steel tube at low pressure, and the products of the decompo sition were measured with a mass spectrometer. It was found that TMGa is unreactive in a stainless steel and/or tantalum tube at 250 K. Howe ver, by 300 K there is significant attenuation of the parent TMGa peak in both tubes. The dimethylgallium (DMGa) disappears between 600 and 700 K, while the monomethylgallium (MMGa) contribution disappears betw een 650 and 800 K. The gallium signal is lost between 700 and 800 K. C alibration runs were performed to determine if the cracking pattern of TMGa changes with temperature. It was found that the cracking pattern of TMGa is essentially constant from 200 to 500 K. As a result, the c hanges in mass spectrometer signal observed in our work must be due to changes in the composition of the gas, and not due to changes in the cracking pattern of the various species in the mass spectrometer. Ther efore, the conclusion of our study is that TMGa decomposes at room tem perature on a stainless steel or tantalum tube, to yield DMGa. The DMG a decomposes between 500 and 700 K to yield MMGa. The MMGa decomposes between 700 and 800 K to yield gallium. The gallium signal is lost abo ve 800 K, probably due to deposition of gallium inside the cracker. Th ese results show that under UHV conditions, TMGa is much more reactive than previous investigators had supposed. In particular, the results indicate that special precautions must be taken to get TMGa into a vac uum system. If one puts TMGa through a standard doser at temperatures slightly above room temperature one will get significant DMGa even aft er days of passivation.