HIGH DYNAMIC CMOS PREAMPLIFIERS FOR QW DIODES

A CMOS transimpedance amplifier was designed as a front end preamplifi er for electro-optic quantum well sensors. The circuit layout is optim ised, in terms of silicon area, to fully exploit thr capability oi an AT&T flip-chip technique by which thr quantum well sensors are directl y bonded to the last metal layer of an integrated circuit. The particu lar circuit topology achieves a high output swing and good noise behav iour, which allow a 70dB dynamic range. This amplifier can be provided with peaking and/or offset trimming circuits.