LARGE SWING, HIGH LINEARITY TRANSCONDUCTOR IN 0.5-MU-M CMOS TECHNOLOGY

Authors
SANDULEANU MAT VANTUIJL AJM WASSENAAR RF
Citation
Mat. Sanduleanu et al., LARGE SWING, HIGH LINEARITY TRANSCONDUCTOR IN 0.5-MU-M CMOS TECHNOLOGY, Electronics Letters, 34(9), 1998, pp. 878-880
Citations number
3
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
9
Year of publication
1998
Pages
878 - 880
Database
ISI
SICI code
0013-5194(1998)34:9<878:LSHLTI>2.0.ZU;2-R
Abstract
The authors present a low voltage, large swing, transconductor in a 0. 5 mu m CMOS digital technology which preserves a constant input window independent of tuning. The transconductance can be digitally adjusted in coarse steps and continuously adjusted in fine steps. The total ha rmonic distortion is better than -50dB for signal amplitudes of 1.8V(p -p) and power consumption is 1.5mW from a 3.3V power supply.