LOW-THRESHOLD 1.3-MU-M INASP N-TYPE MODULATION-DOPED MQW LASERS GROWNBY GAS-SOURCE MOLECULAR-BEAM EPITAXY

Authors
SHIMIZU H KUMADA K YAMANAKA N IWAI N MUKAIHARA T KASUKAWA A
Citation
H. Shimizu et al., LOW-THRESHOLD 1.3-MU-M INASP N-TYPE MODULATION-DOPED MQW LASERS GROWNBY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Electronics Letters, 34(9), 1998, pp. 888-890
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
9
Year of publication
1998
Pages
888 - 890
Database
ISI
SICI code
0013-5194(1998)34:9<888:L1INMM>2.0.ZU;2-J
Abstract
The authors have investigated, for the first time, the effect of n-typ e modulation doping, as well as growth temperature, on the threshold c urrent density of 1.3 mu m InAsP strained MQW lasers: grown by gas-sou rce ME and have obtained threshold current densities as low as 250 A/c m(2) for 1200 mu m long devices.