LOW-THRESHOLD CURRENT 1.3-MU-M INASP QW ACIS LASERS

Authors
IWAI N MUKAIHARA T SHIMIZU H YAMANAKA N KUMADA K KASUKAWA A
Citation
N. Iwai et al., LOW-THRESHOLD CURRENT 1.3-MU-M INASP QW ACIS LASERS, Electronics Letters, 34(9), 1998, pp. 890-891
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
9
Year of publication
1998
Pages
890 - 891
Database
ISI
SICI code
0013-5194(1998)34:9<890:LC1IQA>2.0.ZU;2-I
Abstract
A very low threshold current of 3.0mA and a stable transverse mode ope ration of > 30mW were achieved in 1.3 mu m InAsP strained-laver quantu m well Al-oxide confined inner stripe (ACIS) lasers. Strain-compensate d AlAs/InP/AlInAs super-lattice layers. grown on InP substrate using g as source-MBE, are used for oxidation.