The authors report the first successful demonstration of self-organied
InGaAs quantum wire (QWR) laser diodes (LDs) utilising GaAs multi-ato
mic steps at 77K by pulsed current injections. The lasing wavelength o
f InGaAs QWR-LDs is consistent with the peak position of photoluminesc
ence spectra at 77K. When a cavity direction is perpendicular to the Q
WR's array direction, the threshold current density of InGaAs QWR-LDs
is smaller than that of quantum well LDs.