NUMERICAL-ANALYSIS OF ELECTRICAL CHARACTERISTICS OF POLYSILICON THIN-FILM TRANSISTORS FABRICATED BY EXCIMER-LASER CRYSTALLIZATION

The authors have performed a 2D numerical analysis of the electrical c haracteristics of polysilicon thin-film transistors (TFTs). made by ex cimer laser crystallisation (ELC), with high field-effect mobility (> 300cm(2)/Vs) and low threshold voltage (< 1.5V). In spite of the highl y non-uniform defect distribution in ELC-polysilicon (mainly localised at the grain boundaries), the authors show that the device characteri stics can be adequately described by using, in the numerical analysis. an effective density of states uniformly distributed within the semic onductor. This model, already verified in solid phase crystallised pol ysilicon TFTs. allows the analysis of ELC-polysilicon devices to be si mplified.