IN(AS, SB) SUPERLATTICE-BASED EMITTERS FOR MID-IR WAVELENGTHS

Optical, magneto-optical and time-resolved spectroscopies indicate tha t arsenic-rich InAs/InAs1-x Sb-x strained-layer superlattices have a p ronounced type-II offset, with electrons confined to the alloy layers, encouragingly high radiative efficiencies at wavelengths well into th e midinfrared, and exhibit suppression of Auger recombination. LEDs op erating at 3-10 mu m now give room temperature powers of 30 mu W and a re probably at present limited by inadequate electron confinement.