OPTIMIZATION OF BISTABLE QUANTUM-WELL IR PHOTOTRANSISTORS

Authors
RYZHII V KHMYROVA I RYZHII M
Citation
V. Ryzhii et al., OPTIMIZATION OF BISTABLE QUANTUM-WELL IR PHOTOTRANSISTORS, IEE proceedings. Optoelectronics, 144(5), 1997, pp. 283-286
Citations number
9
Journal title
IEE proceedings. Optoelectronics → ACNP
ISSN journal
13502433
Volume
144
Issue
5
Year of publication
1997
Pages
283 - 286
Database
ISI
SICI code
1350-2433(1997)144:5<283:OOBQIP>2.0.ZU;2-F
Abstract
Bistable quantum-well infrared phototransistors (BQWIPs) utilising int ersubband electron phototransitions and resonant-tunnelling injection are considered. The mechanisms of the bistability effect are discussed . An analytical model of the BQWIP operation is proposed and used to d erive its characteristics. To optimise the BQWIP performance the param eters of the hysteresis loops in the BQWIP characteristics are obtaine d as functions of its physical parameters.