GROWTH AND CHARACTERIZATION OF MID-IR INAS0.9SB0.1 INAS STRAINED MULTIPLE-QUANTUM-WELL LIGHT-EMITTING-DIODES GROWN ON INAS SUBSTRATES/

Molecular beam epitaxy (MBE) has been used to grow strained multiple q uantum well InAs0.9Sb0.1 light-emitting diodes (LEDs) lattice matched on InAs substrates. The LEDs exhibit room-temperature infrared emissio n at 3.4 mu m and can be used to fabricate low cost sensors for the de tection or monitoring of any C-H containing compound. The compositiona l dependence of InAsSb on the As-2 over Sb-4 flux ratio has been exami ned and could be fitted using an empirical expression based on the As- 2 and Sb-4 fluxes and on their relative sticking coefficients. Electro luminescence has been measured at room temperature and at liquid nitro gen temperature. The low temperature spectra peak at 3.4 mu m (InAs) a nd at 3.8 mu m (InAs0.9Sb0.1) At room temperature only InAs emission i s observed. The external efficiencies at room temperature were 1.0 x 1 0(-4), and the maximum output power was 27.5 mu W under pulsed operati on at 740mA (30kHz, 0.6% duty cycle).