DESIGN AND EVALUATION OF A NOVEL ENHANCEMENT-MODE FET LOGIC GATE CONFIGURATION IN ALGAAS GAAS/ALGAAS QUANTUM-WELL HEMT TECHNOLOGY/

Evaluation of a high-performance logic gate configuration, utilising e nhancement mode field effect transistors, is presented in AlGaAs/ GaAs /AlCaAs quantum well HEMT technology. The performance of the gate in t erms of speed, based on frequency divider measurements, shows a very h igh-speed operation achieved by utilising the bootstrap effect in the operation of the logic gate. The gate is suitable for the implementati on of ultra-high-speed LSI circuits where high speed and noise margin are of critical importance.