IMPROVED SINGLE-ENDED SOLUTIONS FOR ULTRAWIDE-BAND MONOLITHIC GAAS AMPLIFIERS

New circuit topologies for wide band frequency response in multistage single-ended active-match GaAs amplifiers are presented. A novel compe nsation technique to equalise high frequency performance has been succ essfully implemented. Two subsequent realisations employing standard 0 .5 mu m low-noise GaAs MESFET technology exhibit major improvements in measured performances, due to the enhanced circuit topology. A -3dB b andwidth up to 5.5GHz from quasi-DC, a transition time better than 50p s with overshoot less than 10% have been achieved. Variable gain range s from 5 to 18dB, depending on the imposed bias, with very good phase linearity. Active input and output broadband matching networks have be en implemented.