HIGH-QUALITY ALGASB, ALGAASSB AND INGAASSB EPITAXIAL LAYERS GROWN BY LIQUID-PHASE EPITAXY FROM SB-RICH MELTS

The paper is concerned with the study of the growth of AlGaSb, AlGaAsS b and InGaAsSb epilayers, which are lattice-matched to GaSb, by means of liquid-phase epitaxy (LPE) from Sb-rich melts. The obtained composi tion ranges were 0.02 less than or equal to x less than or equal to 0. 20 for AlxGa1-xSb, AlxGa1-xAsySb1-y epilayers and 0.04 less than or eq ual to x less than or equal to 0.24 for InxGa1-xAsySb1-y layers. In th e PL spectra measured on AlGaSb and GaInAsSb direct-gap solid solution s, only peaks with a maximum corresponding to the bandgap were observe d. No long-wavelength peaks, which correspond to defects such as V-GaGa-Sb and are typical of GaSb and related solid solutions grown from I n- or Ga-rich melts, were found in PL spectra of the epilayers obtaine d.