SYNTHESIS OF SILICON-BASED POLYMER-FILMS BY UV LASER-ABLATION DEPOSITION OF POLY(METHYLPHENYLSILANE)

Citation
M. Suzuki et al., SYNTHESIS OF SILICON-BASED POLYMER-FILMS BY UV LASER-ABLATION DEPOSITION OF POLY(METHYLPHENYLSILANE), Materials science & engineering. A, Structural materials: properties, microstructure and processing, 246(1-2), 1998, pp. 36-44
Citations number
15
Categorie Soggetti
Material Science
ISSN journal
09215093
Volume
246
Issue
1-2
Year of publication
1998
Pages
36 - 44
Database
ISI
SICI code
0921-5093(1998)246:1-2<36:SOSPBU>2.0.ZU;2-C
Abstract
The deposition of silicon-based polymer film by UV laser ablation of p oly(methylphenylsilane) (PMPS) was studied. Deposited films were forme d by UV laser ablation deposition of PMPS. The molecular weights of th e deposited films were smaller than that of the original polymer. The films exhibited a broad molecular weight distribution ranging from a f ew hundred to ca. 20000. The molecular weight distribution of the film depended on the laser fluence and the laser wavelength. The ablation process caused the Si-Si bonds in the PMPS to be converted into Si-C b onds, at the same time the deposited films contained the same side cha in bonds as PMPS. In addition, the deposited films displayed a Si-H an d an inorganic-like network Si-C bond, which was not contained in the original PMPS. The ablation at 351 nm suppressed the formation of both the Si-PI and the inorganic-like network SI-C bond. (C) 1998 Elsevier Science S.A. All rights reserved.