DISLOCATION REACTIONS AT GAMMA GAMMA'-INTERFACES DURING SHEAR CREEP DEFORMATION IN THE MACROSCOPIC CRYSTALLOGRAPHIC SHEAR SYSTEM (001)[110]OF CMSX6 SUPERALLOY SINGLE-CRYSTALS AT 1025-DEGREES-C/
M. Kolbe et al., DISLOCATION REACTIONS AT GAMMA GAMMA'-INTERFACES DURING SHEAR CREEP DEFORMATION IN THE MACROSCOPIC CRYSTALLOGRAPHIC SHEAR SYSTEM (001)[110]OF CMSX6 SUPERALLOY SINGLE-CRYSTALS AT 1025-DEGREES-C/, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 246(1-2), 1998, pp. 133-142
Reactions between dislocations and between dislocations and gamma'-par
ticles are studied in CMSX6 single crystals which were subjected to sh
ear creep deformation in the macroscopic crystallographic shear system
(001)[110] at T = 1025 degrees C and tau = 85 MPa, Experiments compri
se high resolution shear creep testing and transmission electron micro
scopy. Emphasis is placed on the formation of dislocation networks and
on rafting. The number of activated crystallographic glide systems in
creases during creep. A number of dislocation reactions which rational
ise the features of the observed dislocation networks is identified. I
n secondary creep a (microscopic) slip system of type (001)[110] start
s operating. Moreover experimental evidence for a new type of interact
ion between interface dislocations and the coarsening process of the g
amma'-particles is provided. The explanation is based on three element
s: (i) the stress fields of the interface dislocations result in local
differences in chemical potential; (ii) the interface dislocations pr
ovide pipe diffusion paths from one gamma'-surface to another; (iii) d
islocation climb directly and indirectly (tube/sandbox-analogon) contr
ibutes to this interaction. (C) 1998 Elsevier Science S.A. All rights
reserved.