ROUGHENING AND ISLANDING OF MONOLAYER GE COVERAGE ON VICINAL SI(001) SURFACE

Authors
GUO LW LIN N HUANG Q ZHOU JM CUE N
Citation
Lw. Guo et al., ROUGHENING AND ISLANDING OF MONOLAYER GE COVERAGE ON VICINAL SI(001) SURFACE, Applied surface science, 126(3-4), 1998, pp. 213-218
Citations number
16
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
126
Issue
3-4
Year of publication
1998
Pages
213 - 218
Database
ISI
SICI code
0169-4332(1998)126:3-4<213:RAIOMG>2.0.ZU;2-O
Abstract
Roughening and islanding of monolayer Ce coverage on vicinal Si(001) s urface has been studied using scanning tunneling microscope (STM). For a 3.9 degrees miscut surface, planar buckled-dimer surface is a metas table state limited by a barrier, which can be overcome by a 680 degre es C annealing. After the annealing, the metastable flat surface has b een changed to a rough surface of small hills because of step-bunching , and on top of each hill, a 3 dimensional (3D) nanoscale island was o bserved. The mechanism of this roughening and islanding process have b een discussed. (C) 1998 Elsevier Science B.V.