RAPID THERMAL ANNEALING CHARACTERISTICS OF BE IMPLANTED INTO INSB

Rapid thermal annealing (RTA) characteristics of Be implanted into InS b with an energy of 100 keV and a dose of 5 x 10(14) cm(-2) were inves tigated by SIMS, AES and RES. Annealing range is 300-500 degrees C for 30-60 s. The results show that after RTA there is no redistribution o f Be on the bulk side of the implanted profiles, but the peak concentr ations of Be are reduced in different degrees, and out - diffusion of Be occurs at InSb surface. After annealing at 350 degrees C, lattice d amage of Be-implanted InSb is essentially removed and no stoichiometry change occurs at the surface layer. When the RTA temperature is highe r than 350 degrees C, thermal decomposition of the InSb surface occurs and deficiency of Sb can be observed. The surface in that case consis ts of In, Sb and their oxides. (C) 1998 Elsevier Science B.V.