INTERFACE REACTION OF TI AND MULLITE CERAMIC SUBSTRATE

A 200 nm Ti film was deposited on a polished mullite ceramic substrate at 200 degrees C by electron beam evaporation, and then annealed unde r high vacuum conditions. Secondary ion mass spectrometry (SIMS), Auge r electron spectroscopy (AES) and X-ray diffraction (XRD) measurements were employed to probe the solid interface reaction between Ti and mu llite from 200-650 degrees C. The results show that the first deposite d Ti atoms have formed Ti-O bonds with O on the mullite surface during the deposition, and trace elemental Al and Si atoms have been segrega ted, but the interfacial region is very narrow. It is broadened a litt le after the sample is annealed at 450 degrees C for an hour. interfac ial reaction happens violently when the annealing temperature reaches 650 degrees C for an hour, TiO and Ti-Al as well as Ti-Si compounds ar e formed. (C) 1998 Elsevier Science B.V.