XPS STUDIES OF COPPER DEPOSITION FROM CYCLOOCTADIENE-COPPER(I)-HEXAFLUOROACETYLACETONATE ON SI(111)

Citation
Tq. Cheng et al., XPS STUDIES OF COPPER DEPOSITION FROM CYCLOOCTADIENE-COPPER(I)-HEXAFLUOROACETYLACETONATE ON SI(111), Applied surface science, 126(3-4), 1998, pp. 303-308
Citations number
15
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
ISSN journal
01694332
Volume
126
Issue
3-4
Year of publication
1998
Pages
303 - 308
Database
ISI
SICI code
0169-4332(1998)126:3-4<303:XSOCDF>2.0.ZU;2-8
Abstract
The deposition and dissociation of the precursor cyclooctadiene-copper (I)-hexafluoroacetylacetonate [(COD)Cu(hfac)] on Si(111)-7 X 7 was stu died by XPS at various temperatures. COD is desorbed by similar to 233 K and the decomposition of the hfac ligand occurs by a temperature of 383 K, probably with migration of CFx groups to the Si surface. These further decompose above 383 K and all F signals are lost by 983 K. On ly C and O remain detectable on the surface above 983 K, the former pr obably as carbide. (C) 1998 Elsevier Science B.V.