CEO2 THIN-FILMS ON SI(100) OBTAINED BY PULSED-LASER DEPOSITION

Authors
COSSARUTTO L CHAOUI N MILLON E MULLER JF LAMBERT J ALNOT M
Citation
L. Cossarutto et al., CEO2 THIN-FILMS ON SI(100) OBTAINED BY PULSED-LASER DEPOSITION, Applied surface science, 126(3-4), 1998, pp. 352-355
Citations number
14
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
126
Issue
3-4
Year of publication
1998
Pages
352 - 355
Database
ISI
SICI code
0169-4332(1998)126:3-4<352:CTOSOB>2.0.ZU;2-2
Abstract
Thin films of CeO2 have been deposited on single crystal silicon (100) samples at room temperature by using pulsed laser deposition (PLD). T he study of ion-molecule reactions occurring in the microplasma (by la ser microprobe coupled with mass spectrometry (LMMS)) allows the under standing of the oxygen deficiency observed in films by X-ray photoelec tron spectroscopy (XPS). (C) 1998 Elsevier Science B.V.