HOW THE TYPE OF BOMBARDING ION AFFECTS THE FORMATION OF RADIATION DEFECTS IN SILICON

The method of nonstationary capacitance was used to study how the chem ical nature of implanted ions affects the creation of electrically act ive defects in silicon. Oxygen O+ and nitrogen N+ ions were implanted into Si at a target temperature of 300 K, in doses of 2 X 10(11)cm(-2) with energies of 75 keV, and argon Ar+ ions were implanted in a dose of 7 X 10(10)cm(-2) with energies of 150 keV, in such a way that all t he samples of n- and p-Si received approximately the same number and s patial distribution of primary radiation defects. It was observed that the spectrum of stable radiation defects depends on the nature of the bombarding ion. Thus, the DLTS spectrum of n-Si irradiated by O+ ions has three peaks, whereas the spectrum of n-Si implanted by N+ ions ex hibited only one of these peaks. The DLTS spectra of samples of n- and p-Si implanted by O+ and N+ ions revealed peaks of reverse (anomalous ) polarity, whose energy positions matched the most clearly defined DL TS peaks of silicon samples with the opposite type of conductivity. (C ) 1998 American Institute of Physics. [S1063-7826(98)00205-1].