ANALYSIS OF CHANGES IN THE INTENSITY OF INTRINSIC LUMINESCENCE AFTER DIFFUSION OF COPPER INTO SEMIINSULATING UNDOPED GALLIUM-ARSENIDE CRYSTALS

Authors
VOROBKALO FM GLINCHUK KD PROKHOROVICH AV
Citation
Fm. Vorobkalo et al., ANALYSIS OF CHANGES IN THE INTENSITY OF INTRINSIC LUMINESCENCE AFTER DIFFUSION OF COPPER INTO SEMIINSULATING UNDOPED GALLIUM-ARSENIDE CRYSTALS, Semiconductors, 32(5), 1998, pp. 509-512
Citations number
7
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
32
Issue
5
Year of publication
1998
Pages
509 - 512
Database
ISI
SICI code
1063-7826(1998)32:5<509:AOCITI>2.0.ZU;2-J
Abstract
The effect of copper diffusion into semi-insulating undoped GaAs cryst als on the intensity of intrinsic luminescence is analyzed. It is show n that diffusion of copper into semi-insulating undoped GaAs crystals can lead either to an increase or a decrease in the intensity of intri nsic luminescence. Analytic relations, which connect the magnitude and sign of the effect with recombination parameters in these crystals, a nd also with the intensity of the excitation luminescence, are obtaine d. (C) 1998 American Institute of Physics. [S1063-7826(98)01205-8].