DIFFERENTIAL RESISTANCE OF AU GAAS1-XSBX TUNNELING CONTACTS NEAR THE ZERO-BIAS ANOMALY - II - CONTACTS TO P-GAAS1-XSBX/

The differential resistance R(V) = dV/dI of Au/p-GaAs1-xSbx tunneling contacts was investigated. Schottky barriers were prepared on epitaxia l layers of the solid solution p-GaAs1-xSbx(0.045 < x < 0.125), which were doped with Ge from 0.01 to 5 at.%. It was shown that substantial features are present in the voltage dependences R(V) for Au/p-GaAs1-xS bx contacts as compared with the data for Au/n-GaAs1-xSbx structures. A square-root voltage dependence was observed for the conductance G(V) =(dV/dI)(-1) versus the bias voltage V near the zero-bias anomaly, in agreement with Al'tshuler-Aronov theory for quantum corrections introd uced in the density of states at the Fermi level by the characteristic features of the electron-electron interaction in disordered metals. ( C) 1998 American Institute of Physics. [S1063-7826(98)01405-7].