NONMONOTONIC CHARACTER OF THE GROWTH-TEMPERATURE DEPENDENCE OF THE RESISTANCE OF POLYCRYSTALLINE SILICON FILMS

Authors
SHENGUROV DV PAVLOV DA SHABANOV VN SHENGUROV VG KHOKHLOV AF
Citation
Dv. Shengurov et al., NONMONOTONIC CHARACTER OF THE GROWTH-TEMPERATURE DEPENDENCE OF THE RESISTANCE OF POLYCRYSTALLINE SILICON FILMS, Semiconductors, 32(5), 1998, pp. 562-564
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
32
Issue
5
Year of publication
1998
Pages
562 - 564
Database
ISI
SICI code
1063-7826(1998)32:5<562:NCOTGD>2.0.ZU;2-E
Abstract
The effect of the substrate temperature T-s on the sheet resistance R- s for polycrystalline Si films obtained by molecular-beam deposition w as investigated. It was found that R-s is a nonmonotonic function of T -s for films doped with different impurities during the deposition pro cess. An explanation based on a modified Setto model is proposed for t he experimental results obtained. (C) 1998 American Institute of Physi cs. [S1063-7826(98)02305-9].