Basic principles of operation, fundamental power-generation capabiliti
es, and fabrication technologies are reviewed for three groups of two-
terminal devices, i.e., resonant-tunneling diodes (RTD's), transferred
-electron devices (TED's), and transit-time diodes. The paper focuses
on devices for frequencies above 30 GHz, and an overview of recent res
earch in this area and of various state-of-the-art laboratory results
is given. As an outlook, the potential of some new material systems fo
r high-power devices is discussed.