HYDROGEN-SURFACTANT MEDIATED GROWTH OF GE ON SI(001)

The role of hydrogen in the growth of Ge on a Si(001)-(2 X I) surface was studied by scanning tunneling microscopy and medium energy ion sca ttering spectroscopy. The adsorbed hydrogen was found to (i) increase the number of equilibrium adsorption sites, (ii) lift the diffusion an isotropy, and (iii) lower the diffusivity for Ge adatom, as suggested by the recent first principle calculation. With a dynamically supplied atomic hydrogen flux of similar to 2 monolayers/s, we achieved layer- by-layer growth by preventing growth of the hut cluster beyond the kno wn critical thickness. The 10.0 monolayer Ge layers grown with hydroge n surfactant are strained, while those without it are relaxed.