Me. Tobar et al., HIGH-Q SAPPHIRE-RUTILE FREQUENCY-TEMPERATURE COMPENSATED MICROWAVE DIELECTRIC RESONATORS, IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 45(3), 1998, pp. 830-836
A sapphire-rutile composite resonator was constructed from a cylindric
al sapphire monocrystal with two thin disks of monocrystal rutile held
tightly against the ends. Because rutile exhibits low loss and an opp
osite temperature coefficient of permittivity to sapphire, it is an id
eal material for compensating the frequency-temperature dependence of
a sapphire resonator. Most of the electromagnetic modes in the composi
te structure exhibited turning points (or compensation points) in the
frequency-temperature characteristic. The temperatures of compensation
for the WG quasi TM modes were measured to be below 90 K with Q-facto
rs of the order of a few million depending on the mode. For WG quasi T
E modes, the temperatures of compensation were measured to be between
100 to 160 K with Q-factors of the order of a few hundreds of thousand
s, depending on the mode. The second derivatives of the compensation p
oints were measured to be of the order 0.1 ppm/K-2, which agreed well
with the predicted values.